S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev,'s Advanced Gate Stacks for High-Mobility Semiconductors PDF

By S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev, Professor Paul C. McIntyre, Professor Marc Heyns (eds.)

ISBN-10: 3540714901

ISBN-13: 9783540714903

ISBN-10: 354071491X

ISBN-13: 9783540714910

Will nanoelectronic units proceed to scale in response to Moore’s legislation? At this second, there is not any effortless solution considering gate scaling is swiftly rising as a significant roadblock for the evolution of CMOS know-how. Channel engineering in response to high-mobility semiconductor fabrics (e.g. strained Si, replacement orientation substrates, Ge or III-V compounds) might support triumph over the hindrances on the grounds that they provide functionality enhancement. There are numerous issues although. will we understand how to make advanced engineered substrates (e.g. Germanium-on-Insulator)? that are the simplest interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? will we strategy those fabrics in brief channel transistors utilizing flows, toolsets and understand how just like that during Si expertise? How do those fabrics and units behave on the nanoscale? The reader gets a transparent view of what has been performed up to now, what's the cutting-edge and that are the most demanding situations forward sooner than we come any with regards to a practicable Ge and III-V MOS technology.

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As a result, high performance and low noise MOSFETs are realized. The HF-treated Si(110) surface easily forms a native oxide by air exposure because oxygen can easily reach to the back bond of a hydrogen terminated on Si atom. It is concluded that wet processes and transfer atmosphere before each new process at which the silicon surface must not be oxidized must be carried out in an atmosphere from which oxygen and moisture are removed. By using a alkali- and oxygen-free cleaning method, radical oxidation and moisture free wafer transfer, high performance, low noise and high reliability ULSI can be realized on the Si(110) surface.

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Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong, Int. Electron Devices Meet. Tech. , p. 49 (2003) 57. H. Lee, A. Mocuta, S. Bedell, H. Chen, D. Sadana, K. Rim, P. O’Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A. M. 18 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. S. Takagi Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H. Kermel, M.

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Advanced Gate Stacks for High-Mobility Semiconductors by S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev, Professor Paul C. McIntyre, Professor Marc Heyns (eds.)

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